In the third quarter of 2024, Samsung held a DRAM market share of 41.1 percent, while SK Hynix occupied a market share of 34.4 percent. Micron sat as the third-largest DRAM supplier with a market share of 22.2 percent during the third quarter of 2024. DRAM market fluctuations Overall DRAM revenues amounted to 26.02 billion U.S. dollars for the third quarter of 2024, up from the 22.9 billion U.S. dollars observed in the second quarter of 2024. Samsung is the largest manufacturer of DRAM in terms of revenues. DRAM vs SRAM The primary memory of a computer is called RAM, with the two most used forms of modern RAM being static RAM (SRAM) and dynamic RAM (DRAM). DRAM is a type of volatile memory which, unlike non-volatile flash memory, loses data quickly when cut off from a power supply. Compared to other varieties of volatile memory, DRAM is relatively structurally simple. Whereas SRAM requires four to six transistors per bit, DRAM requires only one transistor and capacitor per bit.

The Report Covers Global Memory Semiconductor Companies and the Market is segmented by Type (DRAM, SRAM, NOR Flash, NAND Flash, ROM & EPROM), by Application (Consumer Products, PC/Laptop, Smartphone/Tablet, Data Center, Automotive), and Geography.

California-based company Corsair, well-known for specializing in PC peripherals and hardware, ranked first among memory manufacturers worldwide as of November 2024, with an overall market share of about 20.44 percent. Another leader of the memory industry was G Skill, ranked second, with over 16 percent of the global memory market.

In the second quarter of 2024, Samsung held a market share of 36.9 percent of the NAND flash memory market worldwide, ranking first among vendors. SK Group ranked second, occupying 22.1 percent of the global market. Computer memory Computer memory refers to the physical devices which are used to store data or programs for use in a computer. Primary storage allows for the short-term storage of data: information is retained for immediate use and is directly accessible by the CPU, usually until the main device is reset or turned off. Secondary storage, either in the form of hard disk drives (HDDs), solid-state drives (SSDs), flash drives, or other longer-term storage devices, record and hold data indefinitely, even when the main device is unpowered. HDD and SSD HDDs and SSDs are both a form of non-volatile memory commonly used for secondary storage in laptops and computers. HDDs are considered to be an old-school storage device, made up of magnetic tape and with mechanical parts inside. A solid-state drive (SSD) is a newer storage technology that has no moving parts. Instead, it uses NAND flash memory, a type of non-volatile storage that does not require power to retain data. Lower-priced laptops often still come with the cheaper HDD option, but most midrange to high-end PCs come with an SSD instead.

The DRAM Market report segments the industry into By Architecture (DDR3, DDR4, DDR5, DDR2/Others Architectures), By Application (Smartphones/Tablets, PC/Laptop, Datacenter, Graphics, Consumer Products, Automotive, Other Applications), and By Geography (United States, Europe, Korea, China, Taiwan, Rest of Asia-Pacific, Rest of the World). Get five years of historical data alongside five-year market forecasts.

The NAND Flash Market report segments the industry into Type (SLC (One-Bit Per Cell), MLC (Two-Bit Per Cell), TLC (Three-Bit Per Cell), QLC (Quad Level Cell)), Structure (2D Structure, 3D Structure), Application (Smartphone, SSD, Memory Card, Tablet, Other Applications), and Geography (North America, Europe, Asia Pacific, Latin America, Middle-East and Africa). Get five years of historical data alongside five-year market forecasts.

The global automotive memory market size reached USD 6.8 Billion in 2024. Looking forward, IMARC Group expects the market to reach USD 18.3 Billion by 2033, exhibiting a growth rate (CAGR) of 11.11% during 2025-2033. The increasing utilization of electronic components and software applications, integration of advanced technologies like artificial intelligence (AI) and machine learning (ML), rising adoption of electric vehicles (EVs) and hybrid vehicles, rapid advancements in manufacturing technologies, and the implementation of favorable government policies are some of the major factors propelling the market.

IMARC Group provides an analysis of the key trends in each sub-segment of the global automotive memory market report, along with forecasts at the global, regional and country level from 2025-2033. Our report has categorized the market based on type, length and contract type.

The US Semiconductor Memory Market Report is Segmented by Type (DRAM, SRAM, NOR Flash, NAND Flash, ROM & EEPROM, and Other Types) and Application (Consumer Products, PC/Laptop, Smartphone/Tablet, Data Center, Automotive, and Other Applications). The Market Sizes and Forecasts are Provided in Terms of Value (USD) for all the Above Segments.

Global Semiconductor Memory Market size will exceed a valuation of USD 404.02 billion by 2032, to grow at a CAGR of 11.90% during the forecast period.

In 2019, SK Hynix was the leading storage manufacturer specializing in NAND or DRAM, accounting for 23.6 percent of global NAND and DRAM storage systems. Samsung occupied 21.7 percent of the global NAND and DRAM storage market, whilst Micron accounted for 20.7 percent of the market.

The size and share of this market is categorized based on Type (Dynamic Random Access Memory (DRAM), Static Random Access Memory (SRAM), Flash Memory, Read-Only Memory (ROM), Programmable Read-Only Memory (PROM)) and Application (Consumer Electronics, Automotive, Industrial, Telecommunications, Data Centers) and End-User (Telecommunication, Healthcare, Aerospace and Defense, Retail, IT and Telecommunications) and geographical regions (North America, Europe, Asia-Pacific, South America, Middle-East and Africa).

The size of the 3D NAND Memory Market was valued at USD 26634.84 Million in 2024 and is projected to reach USD 70978.68 Million by 2033, with an expected CAGR of 15.03% during the forecast period. The 3D NAND memory market is rapidly growing due to increasing demand for high-capacity, cost-efficient, and power-efficient storage solutions. 3D NAND technology stacks memory cells vertically, thus achieving higher density and better performance than traditional planar NAND. This innovation has made it a preferred choice in various applications, including consumer electronics, data centers, automotive, and industrial systems. Key growth drivers include the increasing adoption of solid-state drives (SSDs) in laptops, desktops, and enterprise storage systems, where 3D NAND provides faster data access speeds and improved durability. Additionally, the growth of data-intensive applications such as Artificial Intelligence (AI), Internet of Things (IoT), and 5G networks has further boosted the demand for advanced storage solutions. Advances in process technology, like stacking multilayer products in 128 layers and above, further increase storage density but lower unit costs. Asia-Pacific is the largest market driver, given its strong manufacturing capabilities and the widespread adoption of consumer electronics. 3D NAND memory will grow steadily as the world rapidly adopts digital transformation and expands its need for efficient storage of diverse high-performance data. Recent developments include: South Korea’s Samsung Electronics Co. launched its latest 286-layer NAND chips in April 2024, boosting storage capacity by 50 percent. Google and Apple, among other tech giants, received samples that were directed at AI data centers and smartphones., Kioxia of Japan disclosed a plan in April 2024 to produce over 1000 layers of 3D-NAND memory by 2031. Hidefumi Miyajima, CTO, explained the technical problems associated with this as well as how they can be resolved, which he delivered during the lecture held at Tokyo City University for the first Applied Physical Society Spring Meeting., YMTC of China had the world's most advanced three-dimensional NAND flash memory chip, X3-9070, consisting of a staggering two hundred and thirty-two individual X-train photo-transistor layers despite US sanctions against it in October 2023. This was an exemplary illustration of how China has been steadfast in its quest to grow its semiconductor business amidst global challenges., SK Hynix announced its groundbreaking 321-layer NAND flash technology based on Charge Trap Flash at the Flash Memory Summit in August 2023, marking a significant advancement over previous models in terms of storage density and performance. The silicon die containing four such stacked cells could store up to one terabit (Tbit), thereby delivering substantial improvement in chip area efficiency compared to prior technologies., At the recent Flash Memory Summit held in Santa Clara in July 2023, California NEO CEO Andy Hsu presented an innovative new type of AI chip that uses a novel “Local Computing” technique built around this new paradigm showed a significant advantage over all prior designs (Wang et al.,2019). His speech was entitled: “Revolutionary New Artificial Intelligence Chips Based on Innovative Architectures.”, China’s Yangtze Memory revealed their new product in October 2023 called Xtacking enhanced technology-based 120 layers ‘NAND flash’ memory, reportedly motivated by US restrictions limiting the supply of 3D NAND to China. The idea behind this technology was to bridge the performance gap that existed within the conventional 2D NAND structures, which had limited capacity for both write and read operations., In December 2023, senior lead engineer Richard Pasto of Intel joined SK Hynix’s Research & Development team headquarters in South Korea. He added his experience of twenty-eight years by joining Intel experts like Rezaul Haque (June) and Erika Shiple (November)., Japan-based Tokyo Electron announced a major breakthrough in 3D-NAND flash memory technology in October 2023, which poses a significant threat to Lam Research’s industry leadership position. It proposed a method of etching channel holes into memory cells, thereby increasing the density of stored information.. Notable trends are: Increase in demand for data centers.

NAND Flash Memory Market Size Surpasses $ 104.86 Bn by 2030 with a CAGR of 5.7%. Global Market Report Based on Market Share, Growth, Trends, Segments, Industry Outlook By 2030.

According to Cognitive Market Research, the global high bandwidth memory market size is USD 2514.2 million in 2024 and will expand at a compound annual growth rate (CAGR) of 26.20% from 2024 to 2031.

North America held the major market of more than 40% of the global revenue with a market size of USD 1005.68 million in 2024 and will grow at a compound annual growth rate (CAGR) of 24.4% from 2024 to 2031.
Europe accounted for a share of over 30% of the global market size of USD 754.26 million.
Asia Pacific held the market of around 23% of the global revenue with a market size of USD 578.27 million in 2024 and will grow at a compound annual growth rate (CAGR) of 28.2% from 2024 to 2031.
Latin America market of more than 5% of the global revenue with a market size of USD 125.71 million in 2024 and will grow at a compound annual growth rate (CAGR) of 25.6% from 2024 to 2031.
Middle East and Africa held the major market of around 2% of the global revenue with a market size of USD 50.28 million in 2024 and will grow at a compound annual growth rate (CAGR) of 25.9% from 2024 to 2031.
The graphics processing unit (GPU) category held the highest high bandwidth memory market revenue share in 2024.

Market Dynamics of High bandwidth Memory Market

Key Drivers of High bandwidth Memory Market

Growing Requirement for Very Scalable, Low Power Consumption, High Bandwidth Memories to Increase the Demand Globally

After the HBM standard was originally released, ten years later, 2.5 generations were available on the market.Synopsys reports that throughout that time, the amount of data created, captured, copied, and consumed increased dramatically, rising from 2 zettabytes in 2010 to 64.2 ZB in 2020. Synopsys predicts that by 2025, the quantity will have increased by almost three times, to 181 ZB. In 2016, HBM2 raised both the capacity and signaling rate to 256 GB/s and 2 Gbps, respectively. Two years later, HBM2E hit the market and eventually achieved data rates of approximately 460 GB/s and 3.6 Gbps. Performance in computing has been and will continue to be greatly aided by higher memory bandwidth. As a result, both the need for performance and the advanced applications' constant bandwidth requirements are increasing. Thus, driving the market growth.

Growing Miniaturization Trends in Electronic Devices to Propel Market Growth

One of the prevailing trends in the consumer electronics industry is the growing need for electronics that are lighter, smaller, and more efficient. This phenomenon is commonly referred to as the shrinking of electronics and components. Buying products with many functions on a single platform is now feasible due to the rapid improvements in technology. Another innovation that necessitates fewer electrical components is memory chips, which require thinner and smaller form factors to conserve space. Applications of high-speed, highly integrated autonomous cars clearly show that reduced space consumption and improved electrical performance are needed. Because of these considerations in the final product design, high bandwidth memory becomes more important when building modern electronic systems.

Restraint Factors Of High bandwidth Memory Market

High Prices and Design Challenges Associated with HBM to Limit the Sales

HBM is a powerful variant of an ultra-bandwidth solution, but it is also fairly pricey due to the product's complexity. HBM2 has a high cost. Assuming a high yield and a USD 20 adjustment, GDDR5 is almost three times more expensive than this. HBM has certain disadvantages in terms of cost, capacity, and application complexity, even though it exceeds GDDR in terms of high bandwidth and applicability. Because of this, GDDR and HBM are being implemented by numerous graphic card manufacturers in various application fields. Chipmakers have made it quite clear that HBM3 makes sense in systems that contain an interposer, like a chipset-based design that has already used a silicon interposer for that reason. Therefore, market growth will be constrained by high prices and design challenges associated with HBM.

Impact of Covid-19 on the High Bandwidth Memory Market

The market for high bandwidth memory has been impacted by Covid-19 in a number of ways. Production and delivery of HBM goods were first delayed due to problems in the worldwide supply chain and manufacturing procedures. Some of the early disappointment...

NAND Flash Memory:High density, low cost, durableUsed in smartphones, laptops, USB flash drives, solid-state drivesNOR Flash Memory:Higher speed, lower densityUsed in embedded systems, gaming consoles, network devicesMemory Chips:The core components of flash memoryManufactured using advanced lithography and packaging technologiesFlash Controller:Manages the data transfers between memory chips and host systemsEnsures reliable and efficient operation Recent developments include: February 2023, A portable 5G network solution is created by Pegatron and Intel for Taiwan's emergency responders. The solution offers firemen multiparty, low-latency audio and video communication as well as high-definition video streaming., December 2021: The development of a flash memory that can store seven bits of data per cell (7bpc) for 10 years at 150°C was announced by Floadia. In order to keep data for extended periods of time without power, Floadia's novel memory can hold more charges per cell and has a longer retention than conventional flash memory., February 2019: One of the biggest memory chip manufacturers in the world, SK Hynix, has revealed plans to invest a staggering USD 106 billion, largely in South Korea to build four new semiconductor manufacturing facilities. At its headquarters in Icheon, Gyeonggi-do, South Korea, the firm had a completion ceremony for its new fabrication factory M16 in April 2021., December 2020: TDK Corporation (TSE:6762) has introduced a new generation of flash storage products with five series for industrial, medical, smart grid, transportation, and security applications, which will be available in December 2020. All five of them are based on GBDriver GS2, which is TDK’s proprietary NAND Flash memory control IC that supports serial ATA. Nonetheless, data reliability requirements keep becoming smarter while over 1 TB capacity flash storage is more greatly employed in view of the progress in the technology of 3D flash memories. In addition to being used by various IIoT devices like edge devices in industrial equipment for storing device applications and OSs, flash storage integrated into others should also offer user data protection as well as high reliability., Huawei launched two new ICT all-flash storage products during Huawei CONNECT 2023, which was held in Paris last November: OceanStor Pacific 9920 and OceanStor Dorado 2100, which are designed for more efficient and reliable data centers. For instance, the new bandwidth for this kind of new flash storage product stands at around twenty-eight times faster than HDDs. However, it is important to note that this improved performance is achieved using fewer energy resources, too. Specifications wise: OceanStor Pacific 9920 is an SSD-based scale-out storage system that provides high-performance SSDs and implements new data reduction algorithms. It offers a single-disk capacity of up to 30.72TB and a space capacity of up to 768 TB, containing only two units., Alliance Memory has unveiled a family of multiple input/output serial NOR flashes that run at 3V for the discontinued N25Q series devices used by Micron Technology customers to guarantee their supply continuity. In addition to the fast program and erase times of 0.3ms and 40ms typical, respectively, the AS25F series supports single, dual, and quad SPI modes along with fast read performance up to 104MHz. These devices support a single power supply voltage (2.7V to 3.6V) needed in the industrial temperature range from -40°C up to +85°C while available in 8-pin SOP Wide Body (209mils) packages or programmable 8L WSON (6x5mm) models.. Key drivers for this market are: NEED FOR HIGH-SPEED AND SCALABLE MEMORY DEVICES, GROWING DEMAND FOR SERIAL MEMORY FOR NAVIGATION; INCREASING ADOPTION OF INTERNET-OF-THINGS. Notable trends are: Rising Use of 5G AND IOT Devices is driving the market growth.

The global Static Random Access Memory Market size is projected to reach USD 695.13 Million by 2032 from USD 488.95 Million in 2024, growing at a CAGR of 4.2% from 2025 to 2032 and expected to grow by USD 498.37 Million in 2025.

The global in-memory database market size reached USD 8.0 Billion in 2024. Looking forward, IMARC Group expects the market to reach USD 29.9 Billion by 2033, exhibiting a growth rate (CAGR) of 14.93% during 2025-2033.

IMARC Group provides an analysis of the key trends in each segment of the global in-memory database market report, along with forecasts at the global, regional and country levels from 2025-2033. Our report has categorized the market based on data type, application, end user and vertical.

ECC Memory Market Size Surpasses $ 20,038.15 Mn by 2031 with a CAGR of 6.9%. Rising utilization of ECC memory in data centers is driving the market growth.

Analyze the market segmentation of the Emerging Memory Technologies industry. Gain insights into market share distribution with a detailed breakdown of key segments and their growth.

In 2024, Samsung Electronics held a 41.5 percent share of the global dynamic random-access memory (DRAM) market based on sales revenue. Figures had slightly decreased compared to the market share of the previous year.